The effect of intracenter transitions on the variation of the Verdet c
onstant V(E) in an Fe-containing semimagnetic semiconductor is studied
. The (5) Gamma(3)(D-5)-->(3) Gamma(4)(H-3) intracenter transition is
found to show up distinctly in the low temperature absorption spectrum
. At the same time, because the transition probabilities for left and
right circularly polarized light are equal, intracenter transitions ma
ke no contribution to the Verdet constant near the fundamental absorpt
ion edge. (C) 1996 American Institute of Physics.