The suppression of the emitter current crowding effect in Auger transi
stors with tunnel MOS emitters based on Al/SiO2/n-Si structures is stu
died. The potential of the induced base along the emitter is smoothed
out by an internal minority carrier source: Auger ionization by inject
ed electrons. In order to explain this effect quantitatively, it is as
sumed that the holes in tunnel MOS structures are less mobile than in
''thick'' structures, Studies are made of the effects of the ''smoothi
ng'' of the base potential when the Auger process is initiated, both o
n the static characteristics of the device and on re transient evoluti
on of the-collector current, The conditions fur observing suppression
of crowding of the emitter current in Anger transistors ale discussed,
especially the effect of the collector voltage. (C) 1996 American Ins
titute of Physics.