SUPPRESSION OF EMITTER CURRENT CROWDING IN AUGER TRANSISTORS

The suppression of the emitter current crowding effect in Auger transi stors with tunnel MOS emitters based on Al/SiO2/n-Si structures is stu died. The potential of the induced base along the emitter is smoothed out by an internal minority carrier source: Auger ionization by inject ed electrons. In order to explain this effect quantitatively, it is as sumed that the holes in tunnel MOS structures are less mobile than in ''thick'' structures, Studies are made of the effects of the ''smoothi ng'' of the base potential when the Auger process is initiated, both o n the static characteristics of the device and on re transient evoluti on of the-collector current, The conditions fur observing suppression of crowding of the emitter current in Anger transistors ale discussed, especially the effect of the collector voltage. (C) 1996 American Ins titute of Physics.