PHOTOELECTRIC PROPERTIES OF PB1-XGEXTE(GA,YB) SOLID-SOLUTIONS

Authors
VYGRANENKO YK SLYNKO EI
Citation
Yk. Vygranenko et Ei. Slynko, PHOTOELECTRIC PROPERTIES OF PB1-XGEXTE(GA,YB) SOLID-SOLUTIONS, Semiconductors, 30(10), 1996, pp. 981-982
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
10
Year of publication
1996
Pages
981 - 982
Database
ISI
SICI code
1063-7826(1996)30:10<981:PPOPS>2.0.ZU;2-R
Abstract
A dielectric state and residual photoconductivity are observed in a Pb 1-xGexTe (x = 0.06) solid solution doped simultaneously with impurity Ga (0.3 at.%) and Yb (0.5-1 at.%). The kinetic properties and spectral characteristics of the photoconductivity in single crystals are inves tigated experimentally. The data are explained in terms of a model whi ch describes a restructuring of the deep center in configuration space . (C) 1996 American Institute of Physics.