A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION

Authors
GOLIKOVA OA KUZNETSOV AN KUDOYAROVA VK KAZANIN MM
Citation
Oa. Golikova et al., A-SI-H FILMS FABRICATED AT ELEVATED-TEMPERATURES BY DIRECT-CURRENT, MAGNETRON-ASSISTED SILANE DECOMPOSITION, Semiconductors, 30(10), 1996, pp. 983-985
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
10
Year of publication
1996
Pages
983 - 985
Database
ISI
SICI code
1063-7826(1996)30:10<983:AFFAEB>2.0.ZU;2-F
Abstract
Direct-current, magnetron-assisted silane decomposition technique in a magnetic field has been tested for the first time for deposition of f ilms of an undoped a-Si:H at deposition temperatures of 300-400 degree s C. By optimizing the process parameters it is possible to obtain dev ice-quality material with a hydrogen content of up to 2 at.%. With thi s method, the microstructure parameter R, which characterizes the rati o of SiH- and SiH2-bonds, can be varied between 0 and 1.0. (C) 1996 Am erican Institute of Physics.