TRANSPARENT AND CONDUCTIVE OXIDE FILM GROWTH AND APPLICATION

Authors
Citation
Pc. Ren et al., TRANSPARENT AND CONDUCTIVE OXIDE FILM GROWTH AND APPLICATION, CHINESE JOURNAL OF CHEMICAL ENGINEERING, 4(3), 1996, pp. 264-270
Citations number
5
Categorie Soggetti
Engineering, Chemical
ISSN journal
10049541
Volume
4
Issue
3
Year of publication
1996
Pages
264 - 270
Database
ISI
SICI code
1004-9541(1996)4:3<264:TACOFG>2.0.ZU;2-6
Abstract
Thin layer polycrystal oxides (amorphous and micro-crystalline) TiO2(F e2O3, SnO2 and In2O3 . Sn) are prepared by the organometallic chemical vapor deposition (MO-CVD) technique at 300-410 degrees C. Their struc tures, surface states and photoelectrochemical properties are describe d by X-ray diffraction (XRD), electron microscopy and three electrode methods. The experiments indicate that these thin layer oxides are sui table for formly transparent conductive coating to serve as photoelect rodes and photocatalysts for splitting of water.