The authors present the first demonstration of the room-temperature co
ntinuous-wave operation of AlGaAs quantum well red (similar to 700nm)
vertical-cavity surface emitting lasers fabricated by the selective ox
idation process. The threshold current is similar to 3.2mA with an out
put power of up to 44 mu W. The laser structures, containing five Al0.
24Ga0.76As quantum wells, were grown on GaAs (311)A substrates by meta
l organic vapour phase epitaxy.