BLUE AND GREEN ELECTROLUMINESCENCE FROM MBE GROWN GAN INGAN HETEROSTRUCTURES/

Authors
TEWS H AVERBECK R GRABER A RIECHERT H
Citation
H. Tews et al., BLUE AND GREEN ELECTROLUMINESCENCE FROM MBE GROWN GAN INGAN HETEROSTRUCTURES/, Electronics Letters, 32(21), 1996, pp. 2004-2006
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
21
Year of publication
1996
Pages
2004 - 2006
Database
ISI
SICI code
0013-5194(1996)32:21<2004:BAGEFM>2.0.ZU;2-4
Abstract
Blue and green electroluminescence from GaN/InGaN pn junctions is repo rted. The layer sequences were grown by molecular beam epitaxy on sapp hire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths.