0.98 mu m-emitting, broad-waveguide-type InGaAs/InGaP/GaAs diode laser
s have been optimised for maximum wallplug efficiency. Optimised-facet
-coated, 100 mu m-widestripe, 500 mu m-long devices having InGaAsP opt
ical-waveguide thicknesses of 0.6 and 1.2 mu m provide maximum wallplu
g efficiencies of 66% and 62%, respectively. Carbon-doped cap layers a
llow for a series resistance of 0.08 Ohm for devices with 100 X 500 mu
m(2) contact area.