ELECTRONIC-PROPERTIES OF FILTERED CATHODIC VACUUM ARE (FCVA) DEPOSITED SILICON THIN-FILMS

Th electronic properties of silicon films deposited in a filtered cath odic vacuum arc (FCVA) from a highly doped silicon target have been st udied by the authors, and correlated with growth conditions. Films wit h the best electrical properties were deposited with elevated growth s urface temperatures (200-300 degrees C) and low background pressures ( similar to 10(-4) torr) of hydrogen. The number of times that the cath odic arc had to be retriggered during the deposition of a film also si gnificantly affected its electronic properties. Room temperature photo -conductivities similar to 10(-6)(Ohm.cm)(-1) have been measured at AM 1 illumination. This is the first time photo-conductivity has been obs erved in FCVA deposited silicon.