STEAM OXIDATION OF GAAS

Authors
OH TH HUFFAKER DL GRAHAM LA DENG H DEPPE DG
Citation
Th. Oh et al., STEAM OXIDATION OF GAAS, Electronics Letters, 32(21), 1996, pp. 2024-2026
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
21
Year of publication
1996
Pages
2024 - 2026
Database
ISI
SICI code
0013-5194(1996)32:21<2024:SOOG>2.0.ZU;2-6
Abstract
The steam oxidation of GaAs is characterised. In the temperature rang 500 - 520 degrees C the steam process forms a dense, smooth GaxOy film characterised by a volume contraction of 5 - 10%. The oxidation proce ss is readily masked by SiO2, and can therefore be applied selectively to a GaAs crystal surface.