SUPPRESSION OF I-V KINK IN DOPED CHANNEL INALAS INGAAS/INP HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) USING SILICON-NITRIDE PASSIVATION/

Authors
WANG H NG GI GILBERT M OSULLIVAN PJ
Citation
H. Wang et al., SUPPRESSION OF I-V KINK IN DOPED CHANNEL INALAS INGAAS/INP HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) USING SILICON-NITRIDE PASSIVATION/, Electronics Letters, 32(21), 1996, pp. 2026-2027
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
21
Year of publication
1996
Pages
2026 - 2027
Database
ISI
SICI code
0013-5194(1996)32:21<2026:SOIKID>2.0.ZU;2-F
Abstract
The impact of silicon nitride (SiN) surface passivation on the kink af fect of doped channel InAlAs/InGaAs/InP HFETs has been investigated fo r the first time. Experiments show that the I-V kinks of these HFETs c an be reduced significantly by using SiN surface passivation.