EFFECTS OF POINT-DEFECTS ON LATTICE-PARAMETERS OF SEMICONDUCTORS

A model for analyzing the correlation between lattice parameters and p oint defects in semiconductors has been established. The results of th is model for analyzing the substitutes in semiconductors are in accord ance with those from Vegard's law and experiments. Based on this model , the lattice strains caused by the antisites, the tetrahedral and oct ahedral single interstitials, and the interstitial couples are analyze d. The superdilation in lattice parameters of GaAs grown at low temper atures by molecular-beam epitaxy can be interpreted by this model, whi ch is in accordance with the experimental results. This model provides a way of analyzing the stoichiometry in bulk and epitaxial compound s emiconductors nondestructively.