ZINC DIFFUSION IN TELLURIUM DOPED GALLIUM ANTIMONIDE

Zinc diffusion into tellurium doped gallium antimonide, GaSb, has been carried out as a function of time, temperature and antimony over-pres sure. Total zinc profiles as well as carrier concentration profiles ha ve been measured. Results indicate an inverse dependence of the diffus ivity on antimony over-pressure and favour an interstitial-substitutio nal vacancy [F.C. Frank and D. Turnbull, Phys. Rev. 104(1956) 617] or kick-out [U. Gosele and F. Morehead, J. Appl. Phys. 52 (1981) 4617] me chanism. Furthermore, at high zinc concentrations, the profiles indica te an additional component associated with a non-electrically active z inc species which has a small, strongly temperature dependent diffusio n coefficient.