UNCOOLED 4.2 MU-M LIGHT-EMITTING-DIODES BASED ON INAS0.91SB0.09 GASB GROWN BY LPE/

The report describes the epitaxial growth and fabrication of efficient room temperature InAs0.91Sb0.09 semiconductor light-emitting diodes o perating in the infrared wavelength region at 4.2 mu m. These devices have attracted much recent interest as viable infrared light sources f or use in carbon dioxide detection. A study of the LPE growth of latti ce matched InAs1-xSbx onto GaSb substrates from Sb-solution by the sup ercooled growth method is described. The electrical transport properti es and photoluminescence are presented. The n-i-p-InAs0.91Sb0.09/P-GaS b light emitting diodes (LEDs) are studied and the quantum efficiency is discussed.