INAS-BASED LASER DOUBLE HETEROSTRUCTURES WITH P-N-JUNCTION IN THE ACTIVE-REGION

InAs/InAsSbP-based double heterostructures (DHS) with p-n junction in the active region were fabricated and studied by photo- and electrolum inescence methods at 1.8 and 77 K. An energy band diagram for N-InAs0. 73Sb0.09P0.18-InAs-P-InAs0.73Sb0.09P0.18 DHS is calculated which was a pplied to analysis of the radiative transitions in this structure. Two intense channels of radiative recombination are found: a tunnel band- to-acceptor transition in the band bending region in p-InAs at the int erface p-InAs-P-InAsSbP and a transition from Fermi quasilevel of none quilibrium electrons to acceptor in the compensated part of p-layer of the active region. Depending on the doping level of the active region we could obtain laser generation in each of the channels found, i.e. on different wavelengths.