The nonlinear light absorption at the fundamental absorption edge for
high excitation intensities in GaSe has been investigated experimental
ly. The bleaching of band-edge absorption which manifests itself as an
apparent blue shift of the absorption edge can be interpreted on the
base of bandfilling nonlinearities. It is shown that, the observed neg
ative absorption change in GaSe crystal is the basis of optical amplif
ication and the semiconductor laser.