THE APPLICATION OF THE SELECTIVE INTERMIXING IN SELECTED-AREA (SISA) TECHNIQUE TO THE FABRICATION OF PHOTONIC DEVICES IN GAAS ALGAAS STRUCTURES/

We demonstrate the fabrication of multiple wavelength lasers, and mult i-channel wavelength division multiplexers using the one-step 'selecti ve intermixing in selected area' quantum well intermixing technique in GaAs/AlGaAs structures. This technique is based on impurity-free vaca ncy diffusion and enables one to control the degree of intermixing acr oss a wafer. Lasers with the bandgaps tuned to five different position s have been fabricated on a single chip. These lasers showed only smal l variations in transparency current, internal quantum efficiency and internal propagation loss, which indicates that the quality of the mat erial remains good after being intel mixed. Four-channel wavelength de multiplexers or waveguide photodetectors have also been fabricated. Ph otocurrent and spontaneous emission spectra from individual diodes sho wed the shift of the absorption edge by different degrees due to the s elective degree of quantum well intermixing. The results obtained also demonstrate the use of this technique in the fabrication of broad wav elength emission superluminescent diodes.