PREPARATION AND ELECTRICAL-PROPERTIES OF SRTIO3 THIN-FILMS DEPOSITED BY LIQUID SOURCE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION (MOCVD)

SrTiO3 thin films with thicknesses ranging from 30nm to 60nm were grow n on 6-inch-diameter, platinized Si wafers by liquid source metal-orga nic chemical vapor deposition (MOCVD), The crystalline quality and cat ion concentrations of the films are strongly dependent on the depositi on temperature with optimum temperatures ranging from 500 degrees C to 550 degrees C, Semi-conformal deposition on submicron-sized storage n ode patterns is obtained but further improvements in conformality and reproducibility are required. The dielectric constant is about 210 irr espective of the film thickness and leakage current densities are suff iciently small for the dynamic random access memory (DRAM) application s. SiO2 equivalent thickness (T-OX) of the 30-nm-thick STO film is 0.5 1nm. The finding that the leakage current density and dielectric const ant are independent of the Film thickness can be explained by a fully depleted model of the STO him.