DIELECTRIC-PROPERTIES OF SOL-GEL DERIVED PB(MG1 3NB2/3)O-3-PBTIO3 THIN-FILMS/

Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) thin films were fabricated using a s ol-gel method. The dielectric constant was found to be strongly depend ent on the number of strong Mg-O-Nb bonds in the precursor solution. A large number of strong Mg-O-Nb bonds were formed after a long reflux time. This process resulted in PMN thin films with a large dielectric constants sometimes greater than 3000, With a loss tangent of 0.5%. Re laxer characteristics such as weak temperature dependence and weak de bias dependence were also observed in the thin films. These results su ggest that PMN-PT is an important material for thin film capacitor app lications.