ELECTRON-CYCLOTRON-RESONANCE SPUTTERED SRTIO3 THIN-FILMS

SrTiO3 thin films deposited by electron-cyclotron-resonance (ECR) plas ma sputtering at 400 degrees C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO3 samples with 400 degrees C deposition followed by 400 degrees C oxyge n annealing show low leakage current density (on the order of 10(-9) A /cm(2) at 5 V) and high dielectric breakdown strength (> 4 MV/cm). SrT iO3 thin films deposited by ECR sputtering at 400 degrees C are promis ed for capacitor dielectrics of future 1-giga-bit dynamic-random-acces s memories.