PREPARATION AND CHARACTERIZATION OF FERROELECTRIC BI4TI3O12 THIN-FILMS GROWN ON (100)-ORIENTED SILICON-WAFERS

Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared di rectly on (100) silicon substrate by rf planar magnetron sputtering us ing a Bi2TiO5 ceramic target. Higkly c-axis-oriented films were obtain ed at a high deposition rate of about 17 nm/min. The deposited thin fi lms, consisting of plate-like grains about 2 mu m in diameter, were gr own uniformly parallel to the substrate surface. The remanent polariza tion (P-r) and the coercive field (E(c)) of this film at 50 Hz were es timated to be 0.8 mu C/cm(2) and 20 kV/cm, respectively.