S. Sone et al., LOW-TEMPERATURE DEPOSITION OF (BA, SR)TIO3 FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(9B), 1996, pp. 5089-5093
(Ba, Sr)TiO3 films deposited by electron cyclotron resonance plasma ch
emical vapor deposition at 450 degrees C and 500 degrees C are investi
gated. The crystallinity, evaluated by X-ray diffraction and by measur
ing grain size, and electrical properties of films were evaluated for
changes in deposition temperature, deposition rate, and Pa content, wi
thout a post-deposition annealing. Slower deposition rates as well as
higher deposition temperatures were found to improve film crystallinit
y. Evaluation of electrical properties and film crystallinity revealed
that the optimum Ba content of a film deposited at 500 degrees C was
0.4. A 27 nm thick film deposited on a Pt substrate at 500 degrees C a
nd at 1.1 nm/min with a Pa content of 0.4 exhibited a SiO2 equivalent
thickness of 0.65 nn and a leakage current density of 4.6x10(-7) A/cm(
2) at 1V. The film composition was found to be sufficiently uniform th
roughout, i.e., from the top to the side of the films on a stacked bot
tom electrode.