LOW-TEMPERATURE DEPOSITION OF (BA, SR)TIO3 FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION

(Ba, Sr)TiO3 films deposited by electron cyclotron resonance plasma ch emical vapor deposition at 450 degrees C and 500 degrees C are investi gated. The crystallinity, evaluated by X-ray diffraction and by measur ing grain size, and electrical properties of films were evaluated for changes in deposition temperature, deposition rate, and Pa content, wi thout a post-deposition annealing. Slower deposition rates as well as higher deposition temperatures were found to improve film crystallinit y. Evaluation of electrical properties and film crystallinity revealed that the optimum Ba content of a film deposited at 500 degrees C was 0.4. A 27 nm thick film deposited on a Pt substrate at 500 degrees C a nd at 1.1 nm/min with a Pa content of 0.4 exhibited a SiO2 equivalent thickness of 0.65 nn and a leakage current density of 4.6x10(-7) A/cm( 2) at 1V. The film composition was found to be sufficiently uniform th roughout, i.e., from the top to the side of the films on a stacked bot tom electrode.