LOW-TEMPERATURE SINTERING OF PB(MG1 3NB2/3)O-3-PBTIO3 CERAMICS WITH ADDITION OF PBO-BI2O3/

The Low-temperature sintering has been examined in the preparation pro cess of Pb(Mg1/3Nb2/3)O-3-PbTiO3 ceramics. The sintering temperature c ould be reduced from 950 degrees C to 800 degrees C by addition of PbO -Bi2O3 as a lower-melting-point sintering aid. The dielectric constant of 16000 and loss tangent of 0.02 were obtained for Pb[(Mg1/3Nb2/3)(0 .95)Ti-0.05]O-3 ceramics fired at 800 degrees C with 2 mol% of PbO-Bi2 O3. These low-temperature sintering dielectric materials are very prom ising for use in fabrication of printed thick-film capacitors.