LOW-VOLTAGE SWITCHING CHARACTERISTICS OF SRBI2TA2O9 CAPACITORS

Authors
Citation
K. Amanuma et T. Kunio, LOW-VOLTAGE SWITCHING CHARACTERISTICS OF SRBI2TA2O9 CAPACITORS, JPN J A P 1, 35(9B), 1996, pp. 5229-5231
Citations number
6
Categorie Soggetti
Physics, Applied
Volume
35
Issue
9B
Year of publication
1996
Pages
5229 - 5231
Database
ISI
SICI code
Abstract
Ferroelectric capacitor arrays were fabricated using SrBi2Ta2O9 (SET) thin films: Hysteresis and pulse responses were measured as functions of capacitor size and applied voltage. The remanent polarization (P-r) at 5 V does not depend on capacitor size, though P-r at low applied v oltage decreases considerably as capacitor size decreases below 10 mu m. High-voltage pulse application enhances low-voltage polarization sw itching. Retention characteristics strongly depend on operating voltag e. Switching charge at 2 V or above is stable up to 10(4) s retention, while that at 1 V operation decreases with increasing retention time.