Ceramic materials derived from strontium zirconate were prepared by hi
gh-temperature solid-state reaction starting from oxides and carbonate
s. Distorted ABO(3)-type perovskite structures, indexed to the orthorh
ombic system, were obtained for A-site substoichiometric and/or B-site
Dy-doped materials. The conductivity of Sr(Zr1-xDyx)O-3-delta is slig
htly lower than found for Y-doped strontium zirconate with identical t
rivalent dopant content, and increases with water vapour pressure, as
expected for proton-conducting materials. For Dy-free perovskites with
slight A-site substoichiometry (Sr1-yZrO3-delta, with y less than or
equal to 0.02), the conductivity drops a few orders of magnitude and i
s nearly independent of water vapour pressure. The corresponding B-sit
e doped materials [Sr-1-y(Zr1-xDyx) O-3-delta] have the highest conduc
tivities, again dependent on water vapour pressure. This indicates tha
t B-site doping is essential to obtain significant proton conductivity
. The behaviour of these materials can be understood based on a classi
cal defect chemistry type of approach, if one assumes that electron ho
le mobilities at low temperature (approximate to 300 degrees C) are sm
aller than for protons. This trend is reversed at higher temperatures
(>500 degrees C). For highly substoichiometric perovskites (y greater
than or equal to 0.05), even when B-site doped, the conductivity is mi
nimal and independent of water vapour pressure. A blocking intergrain
phase is believed to control the electrical transport properties of th
ese materials. Copyright (C) 1996 Elsevier Science Ltd