Thin carbon films were deposited on silicon substrates at room tempera
ture using a 0.355 mu m Nd:YAG laser wavelength at low irradiance in t
he presence of argon gas. Various techniques including scanning electr
on microscopy, X-ray diffraction and Raman spectroscopy were used to a
nalyze the film quality. The influence of the argon gas pressure on th
e properties of the films is demonstrated and a correlation with the o
ptical emission data is presented.