ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION OF PALLADIUM UNDER VERY MILDCONDITIONS OF TEMPERATURE IN THE PRESENCE OF A LOW REACTIVE GAS PARTIAL-PRESSURE

Palladium thin-film deposition was carried out from the known precurso rs Pd(eta(3)-C3H5)-(Cp), and Pd(eta(3)-C3H5)(hfa), where Cp is (eta(5) -C5H5), cyclopentadienyl ligand and hfa is (CF3-COCHCOCF3), hexafluoro acetylacetonato ligand. The use of a reactive gas such as dihydrogen l ed to unexpected low temperatures of deposition (30-60 degrees C). XPS and electron microprobe analyses revealed that low levels of carbon a re incorporated to the palladium films. X-ray analyses showed crystall ine deposits and scanning electron microscopy revealed grains of 300-1 000 nm. Gas-phase analyses by mass spectrometry and GC/MS of depositio n residues were realized to clarify the reaction mechanisms. Such a de position process leads to metallic palladium with a good purity level.