MEASUREMENT OF THE STOPPING POWERS FOR CHANNELED IONS IN ION-IMPLANTED SINGLE-CRYSTALS

The ion beam channeling method is used in the study of impurity distri butions and implantation damage in crystalline material. This techniqu e requires knowledge of the stopping powers for channeled ions, Althou gh the stopping powers for nonchanneled ions are well established, the energy loss of channeled ions has been studied only in perfect crysta ls. In this work the effect of crystal defects on stopping power of H ions is presented, The silicon single crystals were implanted by 200-8 00 keV Xe ions. The average ratio of stopping power in the [111] and [ 100] axial direction to stopping power in a random direction has been determined by resonance backscattering at 2200 keV. The influence of t he beam misalignment from the crystal axis on the stopping power ratio has been investigated.