SIMS, RBS, AND ION CHANNELING STUDIES OF H-2(-18(+) IRRADIATED LAALO3, (100) SINGLE-CRYSTAL() OR O)

LaAlO3 is a popular single crystal substrate for epitaxial growth of Y Ba2Cu3O7-delta (YBaCuO) high-T-c films. This research concerns the stu dy of both irradiation and annealing of LaAlO3 (100) single crystal us ing SIMS, RBS, acid ion channeling. It has been found that irradiation by 50 keV 1 X 10(16) H-2(+)/cm(2) induces a lightly damaged region in LaAlO3 to a depth of similar to 0.8 mu m. Rapid thermal annealing (RT A) at 870 degrees C results in the annealing of most of the implant da mage near the end of range, and the restoration of a ''perfect'' cryst al near the surface. Whereas denser cascade collision induced by irrad iation with the heavier O ions (200 keV 5 X 10(16) O-18(+)/cm(2)) amor phises the material and RTA at 870 degrees C causes crystal regrow to the surface but leaves significant crystal damage both at the end of t he range and near the surface. The as-implanted H-2 and O-18 concentra tion distributions were obtained with an Atomika 6500 SIMS instrument using 10 keV Cs+ primary beam and compared with the simulated distribu tions by TRIM-92. The diffusivities of hydrogen and oxygen in the irra diated LaAlO3 are also reported.