COMPARISON OF ELASTIC RESONANCE AND ELASTIC RECOIL DETECTION IN THE QUANTIFICATION OF CARBON IN SIGEC

The carbon concentrations of chemical vapor deposition grown Si1-x-yGe xCy (0.25 < x < 0.37 and 0.01 < y0.12) layers on (100) Si with uniform composition profiles were quantified by two ion analysis techniques. Measurements made with backscattering spectrometry using a 4.295 MeV H e2+ incident ion were compared to compositions predicted by elastic re coil detection (ERD) using a 24 MeV Si5+ incident ion. To enhance the carbon scattering cross section for the backscattering measurements, t he 4.265 MeV C-12(alpha, alpha)C-12 elastic resonance reaction was use d. The carbon concentrations of the films were calculated by integrati ng the resonant scattering cross section using the energy width of the layer as the limits of integration. The results of this backscatterin g analysis technique were compared to the predicted carbon concentrati ons obtained by ERD. It was found that the predictions of these techni ques correlated within the uncertainty of each method.