HYDROGEN AND DEUTERIUM PROFILE IN HOMOEPITAXIALLY GROWN CVD DIAMONDS BY ERDA METHOD

Elastic recoil detection analysis (ERDA) was performed to determine H and D concentration profiles near the (100) surfaces of epitaxially gr own diamond films. The other elements were analyzed by Rutherford back scattering spectrometry (RBS) at the same time. Microwave plasma chemi cal vapor deposition (CVD) was used for the growth. After the growth, the specimens were treated with H-2, H-2/O-2, D-2 or D-2/O-2 plasma. T he areal densities of H determined by ERDA ranged from 3 to 4 x 10(15) atoms/cm(2) near the surface of all specimens. Deuterium densities of the samples treated with D-2 or D-2/O-2 plasma ranged from 1 to 2 X 1 0(15) atoms/cm(2). These areal densities were two to three times large r than that of C atoms on the ideal (100) surface of diamond (similar to 1.6 X 10(15) atoms/cm(2)).