ANALYSIS OF RADIATION-INDUCED SEGREGATION IN TYPE-304 STAINLESS-STEELBY PIXE AND RBS CHANNELING

Authors
KAWATSURA K NAKAE T TAKAHASI R NAKAI Y ARAI S AOKI Y GOPPELTLANGER P YAMAMOTO S TAKESHITA H NARAMOTO H HORINO Y MOKUNO Y FUJII K MITAMURA T TERASAWA M UCHIDA H KOTERAZAWA K
Citation
K. Kawatsura et al., ANALYSIS OF RADIATION-INDUCED SEGREGATION IN TYPE-304 STAINLESS-STEELBY PIXE AND RBS CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 363-366
Citations number
19
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
118
Issue
1-4
Year of publication
1996
Pages
363 - 366
Database
ISI
SICI code
0168-583X(1996)118:1-4<363:AORSIT>2.0.ZU;2-9
Abstract
The creation of defects and radiation-induced segregation (RIS) in sin gle crystals of type 304 stainless steel, 1.6 MeV He irradiated up to 2.5 x 10(17) cm(-2) at RT, has been investigated by using a combinatio n of RES and PIXE with channeling (RBS-C and PIXE-C). From the RBS-C, it is found that radiation-induced defects for [110] orientation incre ased more slowly with irradiation dose from those for the [100] and [1 11] orientations. The PIXE-C measurements show that Si atoms segregate to the (100), (110) and (111) surfaces and S atoms seem to enrich sli ghtly in the (100) and (110) surfaces during 1.6 MeV He ion irradiatio n. It is the first time that the phenomenon of radiation-induced segre gation is observed in stainless steels at room temperature irradiation .