HIGH-RESOLUTION RES STUDY OF THE GROWTH AND THE CRYSTALLINE QUALITY OF ULTRATHIN YBACUO FILMS

Citation
D. Huttner et al., HIGH-RESOLUTION RES STUDY OF THE GROWTH AND THE CRYSTALLINE QUALITY OF ULTRATHIN YBACUO FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 578-583
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
118
Issue
1-4
Year of publication
1996
Pages
578 - 583
Database
ISI
SICI code
0168-583X(1996)118:1-4<578:HRSOTG>2.0.ZU;2-M
Abstract
A high energy resolution detection system consisting of a toroidal ele ctrostatic analyzer combined with a novel two-dimensional detector has been installed in a UHV scattering chamber, The angular resolution ac hieved with this system was 0.33 degrees over a range of 23 degrees, a nd the energy resolution, Delta E/E, was 1.95 X 10(-3) over a range of 2.1% of the pass energy. We applied medium energy ion scattering (200 keV He+ ions) combined with channeling to study the initial growth ph enomena and the crystalline quality of YBaCuO ultrathin films on (100) SrTiO3 and MgO substrates exploiting the high depth resolution of the detection system which was 0.5 nm for YBaCuO, The determination of th e coverage as a function of depth revealed that on both substrates the films grow in blocks of one unit cell, But on SrTiO3 the growth of an additional block layer is initiated only after completion of the prec eding layer while on MgO island growth is observed with different cove rage values on three layer levels appearing simultaneously, On SrTiO3 the growth up to a critical thickness of 4 nm is pseudomorphic (chi(mi n) = 2%); at larger thicknesses strain release accompanied by defect i ncorporation leads to chi(min) enhancement (12%).