ION-BEAM ANALYSIS OF SILICON-CARBIDE

Authors
LEAVITT JA MCINTYRE LC ASHBAUGH MD COX RP LIN Z GREGORY RB
Citation
Ja. Leavitt et al., ION-BEAM ANALYSIS OF SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 613-616
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
118
Issue
1-4
Year of publication
1996
Pages
613 - 616
Database
ISI
SICI code
0168-583X(1996)118:1-4<613:IAOS>2.0.ZU;2-F
Abstract
Channeling and backscattering measurements with 3.8 MeV He-4 analysis beams have been used to determine the C/Si stoichiometric ratio in 100 -200 nm SiCx(H-y) films deposited on (100) Si substrates by plasma-enh anced CVD using gas mixtures of CH4 and SiH4. The results show that bo th annealed and unannealed films are amorphous and allow determination of the C/Si ratio to better than +/-10% for 0.2 < x < 1.0. Film hydro gen content was determined by ERD with 3.5 MeV He-4 analysis beams. In addition, potential problems associated with the use of the 4.265 MeV He-4-C resonance to quantify C in Si are discussed.