CHANNELING-LIKE EFFECTS DUE TO THE MACROSCOPIC STRUCTURE OF POROUS SILICON

When performing Rutherford Backscattering Spectrometry (RBS) measureme nts combined with channeling on ''columnar'' porous Si samples with th e beam aligned to the direction of the pores, an additional yield decr ease appears due to the macroscopic structure. Changes in the stopping power as the ions cross holes and material walls will also result in an additional spread in the ion energy. This work presents both experi mental results and Monte Carlo type simulations showing the above stru ctural effects. The simulations were done by a currently developed cod e, RBS-MAST, which is able to treat arbitrary structures on a nm-mu m scale.