CHANNELING ANALYSES OF EPITAXIALLY GROWN YB2C3O7-X THIN-FILM

Citation
Jz. Qu et al., CHANNELING ANALYSES OF EPITAXIALLY GROWN YB2C3O7-X THIN-FILM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 684-687
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
118
Issue
1-4
Year of publication
1996
Pages
684 - 687
Database
ISI
SICI code
0168-583X(1996)118:1-4<684:CAOEGY>2.0.ZU;2-Y
Abstract
The structure features of YBCO {110}-films on (110) SrTiO3 substrate w ere studied by 3.05 MeV He2+ and 6 MeV Li3+ ion channeling measurement . Li3+ ion was used to enhance the mass resolution of Ba, Y and Cu. An gular scan along the [110] directions reflected a misorientation betwe en the film and the substrate. A sample consisting of three distinctiv e layers deposited under three different conditions were used to study the relationships between deposition conditions and crystallographic orientation. The angle of misorientation is consistent with a tilting in compensating. for the lattice parameter difference between the subs trate and the YBCO film.