287 TRAPPING OF IMPLANTED HYDROGEN IN TYPE IA DIAMOND

Recent developments in the doping of diamond and in the technology of diamond film synthesis have stimulated interest in its use as a substr ate material for electronic devices, as well as in a range of other ne w applications. Hydrogen is one of the most common impurities in natur al and synthetic diamond, and is known to affect its electrical proper ties. However, the incorporation of hydrogen in diamond is still not w ell understood. In this paper wt report a study of the trapping of hyd rogen introduced into a type Ia natural diamond by ion implantation. T he hydrogen depth distribution was measured by means of nuclear resona nt reaction analysis (NRRA) after each stage of an annealing program. Deep trapping of implanted hydrogen within its own range distribution was observed, in contrast to the case in silicon.