ION-BEAM MIXING IN ZNSE CDZNSE STRAINED-LAYER STRUCTURES/

Ion beam mixing of ZnSe/CdZnSe strained layer structures, a possible m aterial system for the fabrication of blue laser diodes, has been inve stigated as a function of ion irradiation temperature and dose, The io n-induced damage showed an inverse temperature dependence when compare d to the trend normally observed in semiconductor materials in that th e damage was smaller for LN(2) (77 K) temperature implants than those performed at 150 degrees C. At the temperatures required to maintain g ood crystal quality (temperatures above the 300 degrees C growth tempe rature) intermixing due to thermal diffusion occurs. The implantation process degrades the optical quality of the material, which also limit s the use of ion mixing as a viable technique for photonic device fabr ication in this II-VI system.