SURFACE DISORDER PRODUCTION DURING PLASMA IMMERSION IMPLANTATION AND HIGH-ENERGY ION-IMPLANTATION

High-depth-resolution Rutherford Backscattering Spectrometry (RES) com bined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single cryst al silicon substrates. Single wavelength multiple angle of incidence e llipsometry (MAIE) was applied to estimate the thickness of the surfac e layer. The thickness of the disordered layer-is much higher than the projected range of P ions and it is comparable with that of protons. Another example of surface damage investigation is the analysis of ano malous surface disorder created by 900 keV and 1.4 MeV Xe implantation in (100) silicon. For the 900 keV implants the surface damage was als o characterized with spectroellipsometry (SE). Evaluation of ellipsome tric data yields thickness values for surface damage that are in reaso nable agreement with those obtained by RES.