PHOSPHORUS ION-IMPLANTATION IN TYPE IIA DIAMOND

Low energy phosphorus ions (28 keV) have been implanted into type 2A n atural diamond at a temperature of 800 degrees C. Implanted diamond wa s characterized with 1.4 MeV He ion RES and channeling measurements. F or diamond substrate, the lowest chi(min) was observed along the (110) axis (chi(min) = 9%). For the (100) and (111) axes, the chi(min). was 23% and 28% respectively. For implanted phosphorus, the chi(min) was 45% for (110), 65% for (100) and 60% for (111). It is considered that the large size difference (43%) between phosphorus and carbon atoms is one of the major factors which prevents phosphorus atoms from obtaini ng high substitutionality in the diamond lattice.