HIGH-CONCENTRATION NITROGEN ION DOPING INTO GAAS FOR THE FABRICATION OF GAASN

Nitrogen atoms were introduced into liquid encapsulated Czochralski (L EG) grown GaAs substrates for the nitrogen concentration ([NI) range o f 1 X 10(18) cm(-3) to 1 X 10(22) cm(-3) by high-energy (400 keV) ion implantation. For heat treatment, both furnace annealing (FA) and rapi d thermal annealing (RTA) were adopted. Novel emissions denoted by N-i (i = 1-5), were observed in the 2 K photoluminescence (PL) spectra of FA samples with [N] higher than 2 X 10(21) cm-(3). An emission at aro und 1.30 eV denoted by N-5 or N-5', were suggested to be related with the band gap energies of GaAs1-xNx alloys, which was predicted by a th eory on the band gap bowing of this alloy system. Based on this empiri cal model, we estimated the amount of nitrogen x to be around 0.018.