POLARIZATION EFFECTS IN ALGAAS SINGLE-QUANTUM-WELL LASER STRUCTURE

The linear polarization dependence of the photoluminescence of Al0.08G a0.92As single quantum well laser structure has been investigated for the incident light propagating parallel to the plane of the structure. The polarization dependent excitonic recombinations exhibit fully pol arized behavior of heavy- and light-holes for in plane incident electr ic field vector. The rotation of excitation beam polarization by 90 de grees, however, shows depolarized behavior of excitonic recombinations . The strain induced mixing of heavy- and light-hole valence band is a lso inferred in this excitation geometry. Copyright (C) 1996 Elsevier Science Ltd