NANOMETER PRECISION OF SEMICONDUCTOR MULTILAYER GROWTH

Authors
FOXON CT HUGHES OH
Citation
Ct. Foxon et Oh. Hughes, NANOMETER PRECISION OF SEMICONDUCTOR MULTILAYER GROWTH, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 354(1717), 1996, pp. 2413-2422
Citations number
21
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Philosophical transactions-Royal Society of London. Physical sciences and engineering → ACNP
ISSN journal
09628428
Volume
354
Issue
1717
Year of publication
1996
Pages
2413 - 2422
Database
ISI
SICI code
0962-8428(1996)354:1717<2413:NPOSMG>2.0.ZU;2-V
Abstract
This article discusses the limitations imposed by the molecular beam e pitaxy (MBE) growth process on the performance of double-barrier reson ant tunnelling (DBRT) structures. Improved performance by optimization of the MBE process and appropriate choice of the materials system are also discussed.