X. Gui et al., NUMERICAL-SOLUTION OF THE ELECTROMIGRATION BOUNDARY-VALUE PROBLEM UNDER PULSED DC CONDITIONS, Journal of applied physics, 80(9), 1996, pp. 4948-4951
The one-dimensional electromigration boundary value problem under puls
ed de conditions is numerically investigated by utilizing the transmis
sion-line matrix modeling method. A perfectly blocking boundary, where
void formation and failure occur, is assumed at one end of an interco
nnection line. At the other end, two physically plausible boundary con
ditions are considered. From the design-rule point of view, an approac
h is proposed to convert conveniently the pulsed stress into an equiva
lent de stress that would produce electromigration damage at a similar
rate. Based on the fundamental diffusion-drift model, we show that th
e vacancy buildup behavior under a pulsed dc stress gamma(p) can be de
scribed accurately by the dc stress gamma(dc) scaled according to the
duty factor r of the current pulse, namely, gamma(dc) = rT gamma(p). T
his study also represents a theoretical confirmation for the (jr)(-2)
dependence of the pulsed electromigration failure (where j is the curr
ent density), which has been observed in a number of experimental stud
ies. (C) 1996 American Institute of Physics.