FORMATION AND CHARACTERIZATION OF SI SIO2 MULTILAYER STRUCTURES BY OXYGEN-ION IMPLANTATION INTO SILICON/

Buried double oxide structures in Si have been produced by the sequent ial high- and low-energy implantation of oxygen ions at 2 MeV and 90 k eV, respectively, Each implantation step was followed by a high-temper ature anneal at 1300 degrees C for 6 h. Fourier transform infrared ref lection spectroscopy has been used in order to characterize the as-imp lanted and annealed samples, Rutherford backscattering spectroscopy/ch anneling analysis was also carried out for selected samples, The morph ology of the two buried layers is the same as for the single energy im plants, No interaction or transport of oxygen between the two layers i s observed. The in-between buried Si layer as well as the Si overlayer are of high crystal quality and could be potentially used as waveguid ing layers, in a Si-based optical waveguiding structure. (C) 1996 Amer ican Institute of Physics.