EFFECTS OF ANODIC OXIDE-INDUCED INTERMIXING ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF QUANTUM-WIRE STRUCTURE GROWN ON NONPLANAR GAAS SUBSTRATE

Effects of anodic oxide induced intermixing on the structural and opti cal properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-secti onal transmission electron microscope (XTEM) observation, temperature dependent photoluminescence (PL) and cathodoluminescence (CL) imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accomp anied by a notable blueshift of the sidewall quantum well (SQWL) PL du e to the intermixing. Furthermore, an extended necking region is obser ved after the intermixing by spatially resolved CL. The temperature de pendence of the PL intensities of both SQWL and QWR show maxima at app roximately T similar to 110 K indicating the role of the extended neck ing region in feeding carriers to SQWL and QWR. (C) 1996 American Inst itute of Physics.