TEMPERATURE-DEPENDENCE OF OPTICAL-PROPERTIES OF THE DEEP SULFUR CENTER IN SILICON

Spectral distributions of the hole photoionization cross section of th e deep sulfur center in silicon have been measured at 10 different tem peratures within the range 75 K less than or equal to T less than or e qual to 297 K applying the steady-state photocurrent technique, Zero-p honon hole binding energies of the deep donor level have been determin ed at these temperatures by using a detailed numerical fitting procedu re. The temperature dependence of the hole binding energy is well desc ribed by a novel analytical formula with a zero-temperature binding en ergy of 557 meV. Further analysis of our data resulted in a lattice ad justment energy (Franck-Condon shift) of 51 meV and an associated aver age phonon energy of 33 meV. (C) 1996 American Institute of Physics.