TRANSMISSION ELECTRON-MICROSCOPY STUDY OF STACKING-FAULTS AND THE ASSOCIATED PARTIAL DISLOCATIONS IN PSEUDOMORPHIC EPILAYERS OF ZNSE GAAS(001)/

V-shaped double triangular faults in ZnSe/GaAs epilayers have been ide ntified to be incomplete stacking fault pyramids and single stacking f aults identified as stacking fault trapezoids. It is confirmed by tran smission electron microscopy that (101) open boundaries of incomplete stacking fault pyramids are 30 degrees Shockley partial dislocations. The closely spaced parallel acute and obtuse stair-rod dislocation pai r in stacking fault trapezoids form a dislocation dipole. (C) 1996 Ame rican Institute of Physics.