RAMAN-SPECTROSCOPIC STUDY OF SURFACE-LAYER IN FLUORINE-IMPLANTED SI

Raman scattering application was introduced to directly probe the dept h profile of structural changes in a very thin surface layer of F+-imp lanted Si by use of a single Ar+ laser (488 nm) excitation. The result s of Raman scattering and sheet resistance measurement showed an unusu al annealing behavior of the F+-implanted Si:In the range of annealing temperature T-a from 200 degrees C to 400 degrees C, disordering was observed to increase with increasing T-a but a stronger trend of order ing with T-a increasing further above 400 degrees C. This abnormal beh avior could be explained as due to competition between the ordering ef fect of thermal annealing with increasing T-a and the disordering effe ct of the implanted fluorine ions randomly breaking the Si-Si crystal bonds in the surface diffusion layer. (C) 1996 American Institute of P hysics.