SN-IMPLANTATION AND RADIATION-INDUCED STRUCTURAL MODIFICATIONS IN AMORPHOUS SIO2()

Authors
ANGERMANN T DUNKEN HH
Citation
T. Angermann et Hh. Dunken, SN-IMPLANTATION AND RADIATION-INDUCED STRUCTURAL MODIFICATIONS IN AMORPHOUS SIO2(), Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(9), 1996, pp. 1535-1538
Citations number
10
Categorie Soggetti
Chemistry Physical
Journal title
Berichte der Bunsengesellschaft fur Physikalische Chemie
ISSN journal
00059021 → ACNP
Volume
100
Issue
9
Year of publication
1996
Pages
1535 - 1538
Database
ISI
SICI code
0005-9021(1996)100:9<1535:SARSMI>2.0.ZU;2-U
Abstract
The structural damage produced by Sn+-implantation into high purity si lica substrates with doses of 1.1-2.0 x 10(17) ions/cm(2) at an accele ration voltage of 300 keV has been analyzed by infrared reflexion spec troscopy (IRR), UV-VIS spectroscopy, Rutherford backscattering spectro scopy (RES), X-ray diffraction and transmission electron microscopy (T EM). Densification, bond distortion and structural disorder of the imp lanted samples have been investigated. X-ray diffractograms and TEM ob servations proved the formation of nanosize beta-Sn-colloides.