T. Angermann et Hh. Dunken, SN-IMPLANTATION AND RADIATION-INDUCED STRUCTURAL MODIFICATIONS IN AMORPHOUS SIO2(), Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(9), 1996, pp. 1535-1538
Citations number
10
Categorie Soggetti
Chemistry Physical
Journal title
Berichte der Bunsengesellschaft fur Physikalische Chemie
The structural damage produced by Sn+-implantation into high purity si
lica substrates with doses of 1.1-2.0 x 10(17) ions/cm(2) at an accele
ration voltage of 300 keV has been analyzed by infrared reflexion spec
troscopy (IRR), UV-VIS spectroscopy, Rutherford backscattering spectro
scopy (RES), X-ray diffraction and transmission electron microscopy (T
EM). Densification, bond distortion and structural disorder of the imp
lanted samples have been investigated. X-ray diffractograms and TEM ob
servations proved the formation of nanosize beta-Sn-colloides.